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  jun-14-2004 1 bcr166.../semb13 pnp silicon digital transistor ? switching circuit, inverter, interface circuit, driver circuit ? built in bias resistor ( r 1 = 4.7k ? , r 2 = 47k ? ) bcr166/f/l3 bcr166t/w semb13 eha07183 3 2 1 c e b r 1 r 2 eha07173 6 54 3 2 1 c1 b2 e2 c2 b1 e1 1 r r 2 r 1 r 2 tr1 tr2 type marking pin configuration package bcr166 bcr166f BCR166L3 bcr166t bcr166w semb13 wts wts wt wts wts wb 1=b 1=b 1=b 1=b 1=b 1=e1 2=e 2=e 2=e 2=e 2=e 2=b1 3=c 3=c 3=c 3=c 3=c 3=c2 - - - - - 4=e2 - - - - - 5=b2 - - - - - 6=c1 sot23 tsfp-3 tslp-3-4 sc75 sot323 sot666
jun-14-2004 2 bcr166.../semb13 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 5 input on voltage v i(on) 15 collector current i c 100 ma total power dissipation- bcr166, t s 102c bcr166f, t s 128c BCR166L3, t s 135c bcr166t, t s 109c bcr166w, t s 124c semb13, t s 75c p tot 200 250 250 250 250 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) bcr166 bcr166f BCR166L3 bcr166t bcr166w semb13 r thjs 240 90 60 165 105 300 k/w 1 for calculation of r thja please refer to application note thermal resistance
jun-14-2004 3 bcr166.../semb13 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - collector-base cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 5 v, i c = 0 i ebo - - 155 a dc current gain 1) i c = 5 ma, v ce = 5 v h fe 70 - - - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.4 - 0.8 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 0.5 - 1.4 input resistor r 1 3.2 4.7 6.2 k ? resistor ratio r 1 / r 2 0.09 0.1 0.11 - ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 160 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1 pulse test: t < 300s; d < 2%
jun-14-2004 4 bcr166.../semb13 dc current gain h fe = ? ( i c ) v ce = 5 v (common emitter configuration) 10 -1 10 0 10 1 10 2 ma i c 0 10 1 10 2 10 3 10 - h fe collector-emitter saturation voltage v cesat = ? ( i c ), h fe = 20 0 0.2 0.4 0.6 v 1 v cesat 0 10 1 10 2 10 ma i c input on voltage v i (on) = ? ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -1 10 0 10 1 10 2 10 ma i c input off voltage v i(off) = ? ( i c ) v ce = 5v (common emitter configuration) 0 0.2 0.4 0.6 v 1 v i(off) -3 10 -2 10 -1 10 0 10 1 10 ma i c
jun-14-2004 5 bcr166.../semb13 total power dissipation p tot = ? ( t s ) bcr166 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) bcr166f 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) BCR166L3 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) bcr166t 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot
jun-14-2004 6 bcr166.../semb13 total power dissipation p tot = ? ( t s ) bcr166w 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot total power dissipation p tot = ? ( t s ) semb13 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load p totmax / p totdc = ? ( t p ) bcr166 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = ? ( t p ) bcr166 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
jun-14-2004 7 bcr166.../semb13 permissible pulse load p totmax / p totdc = ? ( t p ) bcr166f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr166f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible puls load r thjs = ? ( t p ) BCR166L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) BCR166L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
jun-14-2004 8 bcr166.../semb13 permissible puls load r thjs = ? ( t p ) bcr166t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = ? ( t p ) bcr166t 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr166w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) bcr166w 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
jun-14-2004 9 bcr166.../semb13 permissible puls load r thjs = ? ( t p ) semb13 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) semb13 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 200 4 . all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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